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| BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Power dissipationPC=150mW. Production specification 2SC2859 Pb Lead-free APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2859 Marking WO/WY/WG Package Code SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage Value 35 Units V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~125 Document number: BL/SSSTC100 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification 2SC2859 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT Test conditions IC=100A,IE=0 IC=1mA,IB=0 B MIN 35 30 5 TYP MAX UNIT V V V IE=100A,IC=0 VCB=35V,IE=0 VEB=5V,IC=0 VCE=1V,IC=100mA VCE=6V,IC=400mA IC=100mA, IB=10mA B 0.1 0.1 70 25 0.1 7 300 0.25 400 A A Collector-emitter saturation voltage Collector output capacitance Transition frequency V pF MHz VCB=6V,IE=0,f=1MHz VCE=10V, IC= 1mA CLASSIFICATION Rank Range OF O 70-140 hFE(1) Y 120-240 G 200-400 Document number: BL/SSSTC100 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification 2SC2859 SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device 2SC2859 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC100 Rev.A www.galaxycn.com 3 |
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